Precession coupled spin current in spin torque driven magnetic tunnel junctions

نویسندگان

چکیده

A spin-torque switchable magnetic tunnel junction contains two ferromagnetic electrodes across a barrier that supports spin-polarized current. The induced switching of its more agile, or “free” layer provides the “write” mechanism. Often dynamics non-switching “reference” is also important. Here, we illustrate such involving both free and reference layers by using an exchange-coupled two-macrospin-moment numerical model, described set Landau–Lifshitz–Gilbert (LLG) equations, together with stochastic Langevin-field for finite temperature. Damping-like spin-transfer torque included moments. In steady-state, coupled precession shown to reduce effective spin-current delivered due precessional resonant back flow. This back-flow spin current preferentially affects parallel state dynamics. It not directly related layer’s thermal stability, nor threshold, as determined total anisotropy energy volume. Rather, reduction relates primarily matching frequency between free- reference-layer. Therefore, desirable materials choice avoid fields giving similar dynamic frequencies, so prevent resonance-related loss.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions.

We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-...

متن کامل

Time-resolved measurement of spin-transfer-driven ferromagnetic resonance and spin torque in magnetic tunnel junctions

The bias dependence of the torque that a spin-polarized current exerts on ferromagnetic elements is important for understanding fundamental spin physics in magnetic devices and for applications. Several experimental techniques have been introduced in recent years in attempts to measure spin-transfer torque in magnetic tunnel junctions. However, these techniques have provided only indirect measu...

متن کامل

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1× 10 A cm. The thermal effect and current pulse width on spin-transfer magnetization swit...

متن کامل

Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make non-volatile magnetic random access ...

متن کامل

Anomalous bias dependence of spin torque in magnetic tunnel junctions.

We predict an anomalous bias dependence of the spin transfer torque parallel to the interface, Tparallel, in magnetic tunnel junctions, which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal without a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: AIP Advances

سال: 2021

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/9.0000020